Name
Title | ||
|---|---|---|
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors |
Abstract | ||
|---|---|---|
This paper presents the models for several components needed for GaN IC design. MIT virtual source GaNFET (MVSG) model works very well in modelling the high-voltage p-GaN gate power HEMTs and low-voltage GaN logic transistors. The 2DEG resistor can be modelled either using MVSG model or empirical spice model. Low ohmic resistance can be simply modelled with empirical equation. Circuit simulations and measurements demonstrate the convergence and accuracy of the models. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ESSDERC.2019.8901817 | ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
p-GaN gate HEMT,MVSG model,GaN IC,Circuit simulation,Half-bridge,integrated driver | Convergence (routing),Empirical equations,Spice,Ohmic Resistance,Electronic engineering,Resistor,Integrated circuit design,Transistor,Materials science,Virtual source | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-7281-1540-5 | 0 |
PageRank | References | Authors |
0.34 | 0 | 8 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shuzhen You | 1 | 0 | 0.68 |
| X. Li | 2 | 0 | 0.68 |
| Stefaan Decoutere | 3 | 97 | 51.66 |
| Guido Groeseneken | 4 | 59 | 23.15 |
| Chen Zhen | 5 | 31 | 15.05 |
| J. Liu | 6 | 0 | 0.34 |
| Y. Yamashita | 7 | 0 | 0.34 |
| K. Kobayashi | 8 | 0 | 0.34 |