Name
Title | ||
|---|---|---|
An Architectural Parametric Analysis for Vertical Super-Thin Body (VSTB) MOSFET with Double Material Gate (DMG) |
Abstract | ||
|---|---|---|
A simulation-based systematical investigation of vertical super-thin body (VSTB) MOSFET's architectural parameters' effect on its electrical characteristics was performed using 3-D TCAD Sentaurus tool in order to build an understanding of design parameters' role on nature of device electrostatics. The origin of changes in the device performance for each device parameter variation has been explained precisely in this work. Influence of dual material gate (DMG) VSTB FET on on-to-off current ratio (I
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>
/I
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub>
) was studied. Improvement in the value of I
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub>
/I
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OFF</sub>
and subthreshold swing (SS) has been explained with the help of electron density, mobility, and velocity variations in case of device off and on-states. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/TENCON.2019.8929531 | TENCON 2019 - 2019 IEEE Region 10 Conference (TENCON) |
Keywords | Field | DocType |
single material gate (SMG),double material gate (DMG),non-overlapped (NOL),overlapped (OL) | Electrostatics,Thin body,Electron density,Parametric analysis,Logic gate,Computer science,Electronic engineering,Subthreshold swing,MOSFET,Optoelectronics | Conference |
ISSN | ISBN | Citations |
2159-3442 | 978-1-7281-1896-3 | 0 |
PageRank | References | Authors |
0.34 | 0 | 2 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kuheli Roy Barman | 1 | 0 | 0.34 |
| Srimanta Baishya | 2 | 3 | 4.75 |