Name
Title | ||
|---|---|---|
Investigation of NbOx-based volatile switching device with self-rectifying characteristics |
Abstract | ||
|---|---|---|
The niobium oxide based nonlinear devices were fabricated and analyzed. The electrical tests present good control over device-to-device variation and stable endurance more than 106. The conduction mechanism was comprehensively discussed. The low-voltage region relates to SCLC, while Schottky and F-N tunneling are responsible for negative and positive high-voltage region respectively. Consequently, the volatile switching may originate from the capture and release of electrons by traps in SCLC mechanism, and this relaxation phenomenon is evaluated quantitatively. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1007/s11432-019-9894-0 | Science China Information Sciences |
DocType | Volume | Issue |
Journal | 62 | 12 |
ISSN | Citations | PageRank |
1674-733X | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yichen Fang | 1 | 0 | 2.03 |
| Zongwei Wang | 2 | 1 | 1.38 |
| Caidie Cheng | 3 | 1 | 1.37 |
| Zhizhen Yu | 4 | 0 | 2.03 |
| Teng Zhang | 5 | 4 | 4.24 |
| Yuchao Yang | 6 | 4 | 4.80 |
| Yimao Cai | 7 | 9 | 7.26 |
| Ru Huang | 8 | 188 | 48.74 |