Name
Title | ||
|---|---|---|
Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides |
Abstract | ||
|---|---|---|
Two-dimensional layered materials (2DLMs) have triggered a broad research thrust over the last decade worldwide. Different from the gapless graphene, transition metal dichalcogenides (TMDs) exhibit versatile bandstructure, with bandgap sizes ranging from semi-metallic to over 2 eV. Therefore, 2D-TMDs can be utilized in various applications from logic to optoelectronic devices. In this review we first introduce the latest developments of the wafer-scale synthesis of continuous TMD films, then we present recent advances in large scale devices and circuits based on TMD films, including logic, memory, optoelectronic and analog devices. We also provide a perspective and a look at the future device applications based on wafer-scale 2D-TMDs. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1007/s11432-019-2651-x | Science China Information Sciences |
Keywords | DocType | Volume |
two-dimensional layered materials, transition metal dichalcogenides, field effect transistors, wafer-scale | Journal | 62 |
Issue | ISSN | Citations |
12 | 1674-733X | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hongwei Tang | 1 | 33 | 7.68 |
| Haima Zhang | 2 | 0 | 0.34 |
| Xinyu Chen | 3 | 0 | 0.68 |
| Yin Wang | 4 | 0 | 0.34 |
| Xinzhi Zhang | 5 | 9 | 3.19 |
| Puyang Cai | 6 | 0 | 0.34 |
| W. Z. Bao | 7 | 0 | 2.03 |