Name
Abstract | ||
|---|---|---|
A high-integrated fifth generation (5G) transceiver that covers over the band 37 to 40 GHz has been manufactured by standard 65-nm CMOS technology. The single CMOS chip that includes double-balanced up-conversion mixer, double-balanced down-conversion mixer, low noise amplifier, buffer amplifier, power amplifier, and switch is mounted on the Rogers board by the flip-chip assembly technology. The measurement results show that the transceiver can achieve an OP1dB of 12.23 dBm and a power-added efficiency at OP
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dB of 12.4%. Under the OFDM 64-QAM 500MHz modulation signal at 38 GHz, the -30 dB error vector magnitude (EVM) compliant output power of the proposed power amplifier is -1 dBm. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ICCE-Berlin47944.2019.8966210 | 2019 IEEE 9th International Conference on Consumer Electronics (ICCE-Berlin) |
Keywords | Field | DocType |
transceiver,CMOS,Millimeter Wave | Extremely high frequency,Low-noise amplifier,Transceiver,Computer science,Buffer amplifier,Modulation,CMOS,Electronic engineering,Orthogonal frequency-division multiplexing,Amplifier | Conference |
ISSN | ISBN | Citations |
2166-6814 | 978-1-7281-2775-0 | 0 |
PageRank | References | Authors |
0.34 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Wei-Tsung Li | 1 | 0 | 0.68 |
| Hung-Yu Lin | 2 | 0 | 0.34 |
| Jeng-Han Tsai | 3 | 0 | 1.69 |