Paper Info
Title
Design of a 28 GHz differential GaAs power amplifier with capacitive neutralization for 5G mmwave applications
Abstract
This paper describes the design of a 28 GHz power amplifier (PA) in a commercial GaAs mHEMT technology using concepts that are typical for mm-wave CMOS design. Simulations show a 1dB output compression point of around 23 dBm with a 30% power-added efficiency (PAE) at 28 GHz, while providing a gain of 12 dB. Comparison with the performance of a similar 28 GHz fully-depleted Silicon-On-Insulator (FDSOI) PA shows an increase of the compression point with 10 dB while efficiency is comparable. The high compression point of this GaAsPA offers a margin for system optimization such as a reduction of the number of antennas for beamforming.
Year
DOI
Venue
2019
10.1109/NEWCAS44328.2019.8961233
2019 17th IEEE International New Circuits and Systems Conference (NEWCAS)
Keywords
Field
DocType
5G,28GHz,GaAs,FD-SOI
Beamforming,Computer science,System optimization,Electronic engineering,Capacitive sensing,CMOS,dBm,Amplifier
Conference
ISSN
ISBN
Citations 
2472-467X
978-1-7281-1032-5
0
PageRank 
References 
Authors
0.34
0
8
Name
Order
Citations
PageRank
Dongyang Yan100.34
Mark Ingels200.34
Giovanni Mangraviti331.07
Yao Liu400.68
Bertrand Parvais5508.58
N. Waldron600.68
N. Collaert701.69
Piet Wambacq852996.10