Name
Abstract | ||
|---|---|---|
In the applications of Internet of Things (IoT), the limitations of the common NVM + RAM hybrid memory architecture cannot simultaneously provided the solution of lower power, low resource consumption and nonvolatile which are critical for IoT designing. Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) has become a major candidate for on-chip memory because of its ideal memory characteristics, such as non-volatile, near zero standby leakage power and compatibility with CMOS. Therefore, this paper focuses on the application of STT-MRAM in the storage of IoT. We design the eSTT-MRAM non-hybrid memory architecture for smart card SoCs. The prototype verification results on Xilinx's ARTIX-7 XC7A100T FPGA platform show that the STT-MRAM-based memory architecture can greatly improve the operating efficiency of SoC programs and reduce the dynamic power consumption of the system due to data storage. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ASICON47005.2019.8983653 | 2019 IEEE 13TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) |
Field | DocType | ISSN |
Computer science,Computer data storage,Smart card,Field-programmable gate array,CMOS,Magnetoresistive random-access memory,Electronic engineering,Dynamic demand,Spin-transfer torque,Memory architecture,Embedded system | Conference | 2162-7541 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kaiwen Lu | 1 | 0 | 0.34 |
| Fengze Yan | 2 | 0 | 0.34 |
| Xingjie Liu | 3 | 0 | 0.68 |
| dongsheng liu | 4 | 15 | 6.85 |
| Peng Liu | 5 | 0 | 0.34 |
| Bo Liu | 6 | 0 | 0.68 |