Name
Abstract | ||
|---|---|---|
The fabrication of high-performance MoS 2 transistor with a reliable gate dielectric layer remains an obstacle due to the lack of dangling bonds for dielectric deposition. Here, we demonstrate the employment of PMMA-based electrolyte film as the gate dielectric for Mos2 transistors. The electrolyte can be utilized to form high quality and uniform thin film by spin-coating method at room temperature. Based on this PMMA-based electrolyte film, top-gated Mos2 field effect transistors (FETs) are fabricated and exhibit exceptional device performance. The ultra-high capacitance of the electrolyte, resulting from the formation of an electric double layer (EDL), yields a current on/off ratio about 105 and a steep subthreshold swing (90 mV/dec) within a low supply voltage (1 V). Furthermore, we investigate the dynamic response of a Mos2 inverter with a switching speed over 100 Hz. This result provides the possibility for realizing low power logic circuit and nano-electronics. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ASICON47005.2019.8983655 | ASICON |
Field | DocType | Citations |
Logic gate,Capacitance,Computer science,Field-effect transistor,Dielectric,Electrolyte,Electronic engineering,Gate dielectric,Thin film,Transistor,Optoelectronics | Conference | 0 |
PageRank | References | Authors |
0.34 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hongwei Tang | 1 | 33 | 7.68 |
| Fuyou Liao | 2 | 0 | 0.68 |
| Xinzhi Zhang | 3 | 9 | 3.19 |
| Jianan Deng | 4 | 0 | 0.68 |
| Jing Wan | 5 | 0 | 2.37 |
| W. Z. Bao | 6 | 0 | 2.03 |