Name
Title | ||
|---|---|---|
The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation |
Abstract | ||
|---|---|---|
This paper reports the application of silicon bipolar junction transistor (BJT) modeling techniques to the modeling of dynamic behavior of high-voltage 4H-SiC BJTs, and the experimental validation thereof. High-voltage silicon BJTs are impractical due to their low current gain that requires a bulky base driver. Emergence of high-voltage 4H-SiC vertical NPN BJTs with a tenfold higher gain enables the application of efficient drivers, with ratings close to those of IGBTs. This paper demonstrates the advantages offered by 4H-SiC BJTs by means of wide-scale measurements at 800 V and 10 A in a range of temperatures up to 175 °C and adjusted base driver switching rates. This paper shows that the turn-
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storage delay in the SiC BJT is two orders of magnitude lower than that of the silicon device. It also shows that the turn-
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switching transients of SiC device are by an order of magnitude and the turn-
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transients are by two orders of magnitude faster than that of its silicon counterpart, resulting in a tenfold reduction of the switching energy. It also demonstrates the temperature dependence of switching transients of the silicon BJT, and the relative temperature-invariance of the SiC device's performance. This paper concludes with validation of the transient models for the 4H-SiC NPN BJT, showing that the model is sufficiently accurate for transient switching and loss calculations. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/TIE.2019.2922918 | IEEE Transactions on Industrial Electronics |
Keywords | Field | DocType |
Silicon carbide,Silicon,Transient analysis,High-voltage techniques,Temperature measurement,Temperature dependence,Switches | Control theory,Bipolar junction transistor,Engineering,High voltage,Optoelectronics,Silicon | Journal |
Volume | Issue | ISSN |
67 | 6 | 0278-0046 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Saeed Jahdi | 1 | 0 | 0.34 |
| Mohammad Hedayati | 2 | 0 | 0.34 |
| Bernard H. Stark | 3 | 15 | 3.80 |
| Phil H. Mellor | 4 | 0 | 0.34 |