Name
Abstract | ||
|---|---|---|
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off during standby operation. To further increase the power savings, a write termination circuit is designed which detects completion of MTJ write and closes the bidirectional current path for the MTJ. A reduction of 25.81% in the number of transistors and reduction of 2.95% in the power consumption is achieved in comparison to prior work on write termination circuits. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/icccnt45670.2019.8944846 | 2019 10TH INTERNATIONAL CONFERENCE ON COMPUTING, COMMUNICATION AND NETWORKING TECHNOLOGIES (ICCCNT) |
Keywords | Field | DocType |
SRAM, Non-Volatile Memory (NVM), write termination, Magnetic Tunnel Junction (MTJ), low power | Computer science,Tunnel junction,Static random-access memory,Sram cell,Transistor,Electronic circuit,Electrical engineering,Power consumption,Spin transfer | Conference |
ISSN | Citations | PageRank |
2162-7665 | 0 | 0.34 |
References | Authors | |
0 | 4 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Kanika Monga | 1 | 0 | 0.34 |
| Akul Malhotra | 2 | 0 | 0.34 |
| Nitin Chaturvedi | 3 | 2 | 3.06 |
| S. Gurunayaranan | 4 | 0 | 0.34 |