Paper Info
Title
Scalability Study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method
Abstract
We have developed a numerical simulation framework for HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> based Ferroelectric Tunnel Junction (FTJ) memory using Non-Equilibrium Green Function (NEGF) and self-consistent potential method which is calibrated by our experimental FTJ results. Scalability and design guideline of Metal-Ferroelectric-Insulator-Semiconductor (MFIS) structure FTJ is investigated in this work. Due to the large asymmetry of dielectric screening length of MFIS structure FTJ electrodes, MFIS structure FTJ shows a higher tunneling electroresistance (TER) ratio than Metal-Ferroelectric-Insulator-Metal (MFIM) structure FTJ, while it has almost the same read current as MFIM structure FTJ. High read current and high TER ratio can be obtained by adjusting property of semiconductor bottom electrodes. A guideline of designing MFIS structure FTJ has been proposed for high read current and high TER ratio. MFIS type FTJ shows a potential for scaling down to sub-20 nm diameter.
Year
DOI
Venue
2019
10.1109/NVMTS47818.2019.8986219
2019 19th Non-Volatile Memory Technology Symposium (NVMTS)
Keywords
Field
DocType
component,Ferroelectric Tunnel Junction (FTJ),Metal-Ferroelectric-Insulator-Semiconductor (MFIS),Scalability,Non-Equilibrium Green Function (NEGF) method
Ferroelectricity,Quantum tunnelling,Green's function,Potential method,Dielectric,Tunnel junction,Electronic engineering,Optoelectronics,Materials science,Scaling,Semiconductor
Conference
ISBN
Citations 
PageRank 
978-1-7281-4432-0
0
0.34
References 
Authors
0
5
Name
Order
Citations
PageRank
Fei Mo100.34
Yusaku Tagawa200.34
Takuya Saraya312.17
Toshiro Hiramoto4278.14
Masaharu Kobayashi501.01