Name
Abstract | ||
|---|---|---|
This study is intended to establish physics-based TCAD (Technology Computer Aided Design) simulation methodology for Normally On GaN/AlGaN/GaN HEMT (High Electron Mobility Transistor) device performance verification. Calibration work is based on literature review and GaN wafer experimental data. Not only fixed charge and donor like traps concentration but also barrier height, tunneling coefficient and energy level for traps also plays vital role in the calibration process as discussed in the paper. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/ICSAI48974.2019.9010496 | 2019 6th International Conference on Systems and Informatics (ICSAI) |
Keywords | DocType | ISBN |
TCAD (Technology Computer Aided Design),GaN HEMT (High Electron Mobility Transistor),fixed charge,donor like traps,energy level | Conference | 978-1-7281-5257-8 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Manoj Kumar Reddy | 1 | 0 | 0.34 |
| Jhansi Lakshmi | 2 | 0 | 0.34 |
| Atluri Hemanth | 3 | 0 | 0.34 |
| Bhajantri Hemanth Kumar | 4 | 0 | 0.34 |
| Lavanya Bandi | 5 | 0 | 0.34 |
| Gene Sheu | 6 | 0 | 2.03 |
| Yu-Lin Song | 7 | 0 | 0.34 |
| Po-An Chen | 8 | 0 | 0.68 |
| Luh-Maan Chang | 9 | 0 | 0.68 |