Title
Design and Evaluation of Low-Complexity Radiation Hardened CMOS Latch for Double-Node Upset Tolerance
Abstract
Double-node upsets induced by the charge sharing effects are emerging as a major reliability issue in nanometer latch design. Although the existing robust latches can provide a good tolerance for double-node upsets, the implementation of these hardened latches incurs in considerable hardware penalties in terms of delay, area, and power, because they rely on traditional hardening techniques such as...
Year
DOI
Venue
2020
10.1109/TCSI.2020.2973676
IEEE Transactions on Circuits and Systems I: Regular Papers
Keywords
DocType
Volume
Latches,Radiation hardening (electronics),Transistors,Redundancy,Hardware,Digital storage
Journal
67
Issue
ISSN
Citations 
6
1549-8328
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
Jing Guo1456.52
Shanshan Liu254.50
Lei Zhu392.29
Fabrizio Lombardi41985259.25