Abstract | ||
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Research discovery of ferroelectricity in doped hafnium dioxide thin films has ignited tremendous activity in exploration of ferroelectric FETs for a range of applications from low-power logic to embedded non-volatile memory to in-memory compute kernels. In this paper, key milestones in the evolution of Ferroelectric Field Effect Transistors (FeFETs) and the emergence of a versatile ferroelectronic platform are presented. FeFET exhibits superior energy efficiency and high performance as embedded nonvolatile memory. When embedded into logic, such as SRAM or D-flip-flop, nonvolatile processor can be designed, which is critical for intermittent computing with unreliable power. The partial polarization switching in multi-domain ferroelectric can be harnessed to develop analog synaptic weight cell for deep learning accelerators. To further improve the energy-efficiency of computation, ferroelectric in-memory computing hardware primitive is designed, with one prominent example of ferroelectric TCAM. Utilizing the ferroelectric switching dynamics, ferroelectric neuron with intrinsic homeostasis can be realized to enable a unified ferroelectric platform for spiking neural network. From all these developments, ferroelectric emerges as a highly promising platform for various exciting applications. |
Year | DOI | Venue |
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2020 | 10.1109/ASP-DAC47756.2020.9045150 | 2020 25th Asia and South Pacific Design Automation Conference (ASP-DAC) |
Keywords | DocType | ISSN |
Ferroelectric,HfO2,Nonvolatile Memory,Synaptic Weight Cell,In-Memory Computing,Neuron | Conference | 2153-6961 |
ISBN | Citations | PageRank |
978-1-7281-4124-4 | 0 | 0.34 |
References | Authors | |
4 | 3 |
Name | Order | Citations | PageRank |
---|---|---|---|
Kai Ni | 1 | 6 | 2.93 |
Sourav Dutta | 2 | 1 | 2.39 |
Suman Datta | 3 | 415 | 51.93 |