Name
Title | ||
|---|---|---|
Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact |
Abstract | ||
|---|---|---|
InGaAs/InP heterojunction bipolar transistors (HBTs) have enabled record results in RF, mm-wave, and high-speed mixed signal circuit designs, due to their simultaneously high ft and fmax cutoff frequencies [1]. For millimeter-wave power amplification, InP HBTs offer wide fractional bandwidths and high efficiencies compared to GaN HEMT technologies, while typically operating at lower power densities (1-2 W/mm normalized to emitter length) and output power levels . To increase the RF power density of InP HBTs, we wish to increase the utilization of the active device area in a fixed footprint, while managing device self-heating. Decoupling the HBT from the InP substrate allows for reduced device thermal resistance by removing high thermal resistivity ternary materials, and the InP substrate itself [2], [3]. Microtransfer printing (MTP) enables devices to be removed from their native substrate, and placed accurately (~1 micron placement error) on another surface [4]. Here, we report results on microtransfer printed InP HBTs placed directly on a metallic sub-collector ohmic contact deposited on a high-thermal conductivity SiC substrate. The HBTs utilize a fine-pitch array of emitter fingers on a single base-collector mesa to increase the HBT active-area utilization while maintaining RF performance. Load-pull measurements at 30 GHz show a increase in RF power density compared to conventional mesa-HBTs with a similar device footprint. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/DRC46940.2019.9046426 | 2019 Device Research Conference (DRC) |
Keywords | DocType | ISSN |
metallic sub-collector ohmic contact,microtransfer printing,high thermal resistivity ternary materials,reduced device thermal resistance,InP substrate,device self-heating,active device area,millimeter-wave power amplification,high-speed mixed signal circuit designs,vertical metal sub-collector contact,mesa-HBTs,RF power density,HBT active-area utilization,HBTs utilize,high-thermal conductivity SiC substrate,frequency 30.0 GHz,SiC,InGaAs-InP | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-7281-2113-0 | 0 | 0.34 |
References | Authors | |
1 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Andy D Carter | 1 | 0 | 1.01 |
| M. Urteaga | 2 | 16 | 7.43 |
| Petra Rowell | 3 | 0 | 0.34 |
| Joshua Bergman | 4 | 0 | 0.34 |
| Andrea Arias | 5 | 0 | 0.34 |