Title
Flexible Top-Gated Monolayer MoS<inf>2</inf> Transistors with High Mobility
Abstract
Flexible electronics could greatly benefit from the realization of large-scale field-effect transistors (FETs) based on two-dimensional (2D) materials that exhibit high carrier mobility, flexibility, and transparency [1]. As high-quality 2D materials are synthesized at high temperatures <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$&gt; 500\ {}^{\circ}\mathrm{C}$</tex> , they must rely on scalable processes for transfer to flexible substrates after growth. However, such transfer processes typically transfer the 2D material using scaffolds of poly(methyl methacrylate) (PMMA) and immersion in corrosive solutions, which can damage the 2D film and leave unwanted residues [2].
Year
DOI
Venue
2019
10.1109/DRC46940.2019.9046389
2019 Device Research Conference (DRC)
Keywords
DocType
ISSN
corrosive solutions,PMMA,poly(methyl methacrylate),two-dimensional materials,carrier mobility,FET,large-scale field-effect transistors,flexible electronics,top-gated monolayer,flexible substrates,high-quality 2D materials,MoS2
Conference
1548-3770
ISBN
Citations 
PageRank 
978-1-7281-2113-0
0
0.34
References 
Authors
0
6
Name
Order
Citations
PageRank
Alwin Daus100.34
Sam Vaziri200.68
Kevin Brenner300.68
Ryan W. Grady400.34
Alvin U. Tang500.34
Eric Pop65012.07