Name
Title | ||
|---|---|---|
Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrate |
Abstract | ||
|---|---|---|
Recently, monolithic integration of III-IV quantum dots (QDs) on Si substrate has attracted much interest due to its potential to integrate photodetectors and lasers in silicon (Si) photonics [1], [2]. However, the device performance is often limited by the defects induced by the lattice mismatch between III-V materials and Si substrate. In this work, we report results of defect characterization on an InAs QD p-i-n photodetector epitaxially grown on Silicon. The device shows a very low dark current and low frequency noise spectroscopy (LFNS) characterizations were carried out to identify and quantify the deep level within the devices. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/DRC46940.2019.9046450 | 2019 Device Research Conference (DRC) |
Keywords | DocType | Volume |
deep level quantification,low frequency noise spectroscopy characterizations,dark current,silicon substrates,InAs quantum dots p-i-n photodetector,III-IV quantum dots,monolithic integration,GaAs-on-V-grooved-silicon substrate,defect characterization,III-V materials,lattice mismatch,silicon photonics,InAs-InGaAs | Conference | 6 |
Issue | ISSN | ISBN |
5 | 1548-3770 | 978-1-7281-2113-0 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
10 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jian Huang | 1 | 11 | 4.34 |
| Yating Wan | 2 | 0 | 0.34 |
| Daehwan Jung | 3 | 0 | 1.69 |
| Justin Norman | 4 | 0 | 0.34 |
| Chen Shang | 5 | 0 | 0.34 |
| Qiang Li | 6 | 0 | 1.01 |
| Kei May Lau | 7 | 3 | 3.54 |
| Arthur Gossard | 8 | 0 | 1.35 |
| John E. Bowers | 9 | 200 | 34.42 |
| Baile Chen | 10 | 0 | 0.34 |