Name
Abstract | ||
|---|---|---|
Most commercially available nitride devices are obtained along [0001] direction. That is why the internal polarization-induced electric fields in violet to green nitride light emitting diode (LED) and laser diode (LD) structures point in a direction opposite to what is desired for efficient flow of electrons and holes. This arrangement persist because of the need to have p-type layers on top of the structure to activate it and the lack of efficient structures grown along [0001] direction. To go around these problems one can use plasma-assisted molecular beam epitaxy (PAMBE) to grow buried tunnel junction (TJ) and invert current flow direction with respect to the built-in polarization [1], [2]. Recent progress in PAMBE resulted in obtaining LDs in wide spectral range (Fig 1) and enabled combining these structures with TJs [3] and even stacking two LDs together [4]. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/DRC46940.2019.9046396 | DRC |
DocType | Citations | PageRank |
Conference | 0 | 0.34 |
References | Authors | |
0 | 11 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Henryk Turski | 1 | 0 | 0.34 |
| M. Siekacz | 2 | 0 | 1.69 |
| Grzegorz Muziol | 3 | 0 | 0.34 |
| Mikolaj Zak | 4 | 0 | 0.34 |
| Shyam Bharadwaj | 5 | 0 | 0.34 |
| Mikolaj Chlipala | 6 | 0 | 0.34 |
| Krzesimir Nowakowski-Szkudlarek | 7 | 0 | 0.34 |
| Mateusz Hajdel | 8 | 0 | 0.34 |
| Huili Grace Xing | 9 | 3 | 4.63 |
| Debdeep Jena | 10 | 10 | 5.91 |
| C. Skierbiszewski | 11 | 0 | 2.03 |