Paper Info
Title
A High Conversion Gain 210-Ghz Inp Dhbt Sub-Harmonic Mixer Using Gain-Enhanced Structure
Abstract
In this paper, we present a novel gain-enhanced sub-harmonic mixer based on 0.5-mu m emitter width InGaAs/InP double heterojunction bipolar transistors (InP DHBTs). The proposed mixer consists of a transconductance stage and a gain-enhanced stage. A common-emitter transistor is used in the first stage to realize the sub-harmonic mixing while another common-emitter transistor is used in the second stage to remix the f(LO+IF) and f(IF) and also amplify the f(2LO+IF). For further verification, a transconductance mixer and a gain-enhanced mixer were designed and fabricated. Compared with the transconductance mixer, the gain-enhanced mixer exhibits a 6.8-dB higher conversion gain with 2-dB lower LO input power and a peak up-conversion gain of 9 dB at 213 GHz with f(IF) = 1 GHz, f(LO) = 106 GHz, and P-IF = 26 dBm P-LO = 3 dBm. To our best knowledge, the gain-enhanced mixing structure is proposed for the first time.
Year
DOI
Venue
2019
10.1109/ACCESS.2019.2930800
IEEE ACCESS
Keywords
DocType
Volume
InGaAs/InP, DHBT, sub-harmonic mixer, gain-enhanced structure
Journal
7
ISSN
Citations 
PageRank 
2169-3536
0
0.34
References 
Authors
0
9
Name
Order
Citations
PageRank
Yukun Li1257.06
Yong Zhang2494.67
Xiao Li300.34
Yapei Chen400.34
Fei Xiao52712.04
Wei Cheng624.25
Yan Sun71124119.96
Haiyan Lu801.01
Ruimin Xu949.05