Name
Abstract | ||
|---|---|---|
Molybdenum disulfide (MoS2) holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2 using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an MoS2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2 and source/drain electrodes can be widely regulated from 11 to 179 meV. The MoS2 phototransistor exhibits excellent responsivity of 2.68 × 104 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1007/s11432-019-1472-6 | Science China Information Sciences |
Keywords | DocType | Volume |
MoS2 phototransistor, electrolyte-gel gating, Schottky barrier, electric double layer, two-dimensional materials | Journal | 62 |
Issue | ISSN | Citations |
12 | 1674-733X | 0 |
PageRank | References | Authors |
0.34 | 0 | 10 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Binmin Wu | 1 | 0 | 0.34 |
| Xudong Wang | 2 | 0 | 0.68 |
| Hongwei Tang | 3 | 0 | 0.34 |
| Tie Lin | 4 | 0 | 0.34 |
| Hong Shen | 5 | 107 | 27.61 |
| Weida Hu | 6 | 1 | 1.16 |
| Xiangjian Meng | 7 | 0 | 0.68 |
| W. Z. Bao | 8 | 0 | 2.03 |
| Jianlu Wang | 9 | 0 | 0.34 |
| Jun-Hao Chu | 10 | 2 | 2.69 |