Paper Info
Title
A 300 GHz Data Communication Receiver Using Plasma-Wave FET Detector in 65nm CMOS
Abstract
This paper presents a fully integrated receiver for 300 GHz communication using plasma-wave field effect transistor (FET) detector in digital 65 nm CMOS technology (f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> /f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> =170/230 GHz). Besides the detector, the receiver chain includes an on chip patch antenna and a broadband base-band amplifier. The low modulation frequency charac-terization shows a responsivity around 3 V/W at 290 GHz with a bandwidth around 20 GHz (280 ∼ 300 GHz). Using a PRBS signal source, the highest measured detectable data rate is 1 Gb/s at 300 GHz carrier frequency, which shows the capability of data communication using the single FET plasma wave detector. The measured data rate is limited by the output power generated from the modulated signal source as well as the noise collected over the bandwidth of the amplifier. To the authors’ best knowledge, this is the first demonstration of successful communication in CMOS with integrated antenna, single plasma wave FET detector and broadband amplifier in sub-millimeter/terahertz wave frequencies.
Year
DOI
Venue
2020
10.1109/RWS45077.2020.9050055
2020 IEEE Radio and Wireless Symposium (RWS)
Keywords
DocType
ISSN
Detector,Plasma wave FET,CMOS,High speed communication,Terahertz
Conference
2164-2958
ISBN
Citations 
PageRank 
978-1-7281-1121-6
0
0.34
References 
Authors
3
8
Name
Order
Citations
PageRank
Kefei Wu100.34
Marwah Shafee200.68
Philippe Le Bars300.34
Walaa Sahyoun400.34
Stephane Blin551.40
Guillaume Ducournau602.70
Wojciech Knap73610.83
Mona Mostafa Hella86814.51