Paper Info
Title
24.7 A 15dBm 12.8%-PAE Compact D-Band Power Amplifier with Two-Way Power Combining in 16nm FinFET CMOS.
Abstract
The drive for higher data-rates has led to the allocation of the spectrum above 100GHz for D-band communication. A high level of integration in a nm-CMOS technology is necessary to keep the cost low and allow for efficient high-speed baseband and DSP circuits. However, the transition from a planar 28nm to a digital FinFET technology, such as 16nm FinFET, poses extra design challenges for mmwave power amplifiers. A solution to these design challenges is proposed in this work and resulted in aD-band 16nm FinFET CMOS power amplifier with a peak gain of 25.6dB, P sat of 15dBm, and PAE max of 12.8% for an area of only 0.062mm2.
Year
DOI
Venue
2020
10.1109/ISSCC19947.2020.9062920
ISSCC
DocType
Citations 
PageRank 
Conference
0
0.34
References 
Authors
0
2
Name
Order
Citations
PageRank
Bart Philippe101.01
Patrick Reynaert246376.50