Name
Abstract | ||
|---|---|---|
This paper demonstrates the design of a Ka-band 0°/180° phase-inverting amplifier (PIA) based on a 3-port transformer in 65-nm CMOS technology. Cascode topology with common-gate (CG) switch is employed to increase the reverse isolation and gain. Layout optimization techniques including double parallel inductors and self-resonant capacitor are used to improve the balance performance. The proposed PIA achieves 10.4 dB gain at 26.5 GHz with 3-dB bandwidth of over 6 GHz (i.e., 24-30 GHz). The maximum measured gain and phase errors are 0.6 dB and 2.5°, respectively. The DC power consumption is only 2.4 mW with 1-V supply. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/A-SSCC47793.2019.9056917 | 2019 IEEE Asian Solid-State Circuits Conference (A-SSCC) |
Keywords | DocType | ISBN |
phase-inverting amplifier (PIA),millimeter-wave,double parallel inductors,self-resonant capacitor,CMOS | Conference | 978-1-7281-5107-6 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chenyu Xu | 1 | 0 | 0.34 |
| Dixian Zhao | 2 | 119 | 18.35 |