Name
Title | ||
|---|---|---|
Ultra-Thin III-V Photodetectors Epitaxially Integrated on Si with Bandwidth Exceeding 25 GHz |
Abstract | ||
|---|---|---|
We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future receiverless communication. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1364/OFC.2020.M3D.3 | OFC |
DocType | Citations | PageRank |
Conference | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Svenja Mauthe | 1 | 0 | 0.34 |
| Yannick Baumgartner | 2 | 0 | 1.69 |
| S. Sant | 3 | 0 | 0.68 |
| Qian Ding | 4 | 0 | 0.34 |
| Marilyne Sousa | 5 | 0 | 1.35 |
| Czornomaz, L. | 6 | 0 | 3.38 |
| A. Schenk | 7 | 6 | 4.24 |
| Moselund, K. | 8 | 0 | 0.68 |