Paper Info
Title
A 2-D Calibration Scheme for Resistive Nonvolatile Memories
Abstract
Resistive nonvolatile memories (NVMs) promise significant performance improvement over existing NVM candidates. However, fabrication nonidealities and parasitics on the access path cause cell location-dependent variations in the total resistance received at the read circuitry. Write characteristics delivered to each cell, as well as the optimal write conditions for each cell, are also location-dep...
Year
DOI
Venue
2020
10.1109/TVLSI.2020.2975589
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Keywords
DocType
Volume
Calibration,Delays,Resistance,Nonvolatile memory,Fabrication,Random access memory,Capacitance
Journal
28
Issue
ISSN
Citations 
6
1063-8210
0
PageRank 
References 
Authors
0.34
0
4
Name
Order
Citations
PageRank
Albert Lee1628.49
Raahul Jagannathan200.34
Di Wu3365.37
Kang L. Wang421.40