Name
Abstract | ||
|---|---|---|
With fast switching GaN any parasitic gate loop inductance degrades the switching performance and may lead to false turn-on as well as gate voltage overshoot. Two approaches to overcome these challenges in driving GaN transistors are discussed in this paper. In a discrete silicon based driver, the gate loop inductance is actively utilized for a resonant gate drive approach. In a second implementation, the gate loop inductance is reduced close to zero by GaN-on-Si monolithic integration of the power transistor and the driver on one die. It includes an integrated supply voltage regulator circuit that generates the gate drive voltage out of the high-voltage switching node. The results show fast and robust switching behavior with minimal ringing. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/CICC48029.2020.9075937 | 2020 IEEE Custom Integrated Circuits Conference (CICC) |
Keywords | DocType | ISSN |
GaN,drivers,gate loop inductance,robust switching,high dV/dt slew rate | Conference | 0886-5930 |
ISBN | Citations | PageRank |
978-1-7281-6032-0 | 0 | 0.34 |
References | Authors | |
2 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Maik Kaufmann | 1 | 2 | 1.52 |
| Achim Seidel | 2 | 7 | 2.99 |
| Bernhard Wicht | 3 | 19 | 9.30 |