Abstract | ||
---|---|---|
We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub>
) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
, Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1aB</sub>
) is 19.1 dBm. Measured PAE at P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub>
and 6dB power back-off are 23% and 10.3%, respectively. |
Year | DOI | Venue |
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2020 | 10.1109/CICC48029.2020.9075906 | 2020 IEEE Custom Integrated Circuits Conference (CICC) |
Keywords | DocType | ISSN |
power amplifier,28GHz,millimeter wave,current combining,stacked-FET PA,FD-SOI | Conference | 0886-5930 |
ISBN | Citations | PageRank |
978-1-7281-6032-0 | 0 | 0.34 |
References | Authors | |
2 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Zhiwei Zong | 1 | 4 | 2.43 |
Xinyan Tang | 2 | 0 | 0.34 |
Johan Nguyen | 3 | 1 | 2.05 |
Khaled Khalaf | 4 | 0 | 0.68 |
Giovanni Mangraviti | 5 | 47 | 9.17 |
Yao Liu | 6 | 0 | 0.68 |
Piet Wambacq | 7 | 529 | 96.10 |