Title
A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI
Abstract
We present a two-way current combining power amplifier (PA) for 28GHz wireless communication. To boost the saturated output power (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub> ) and maintain a high power-added efficiency (PAE), a differential 3-stacked transistors structure is used for the unit PA cell. The stability factor and the PAE are improved with capacitive neutralization and shunt inductor intermediate node matching. Reliability issues under a 2.4V supply voltage are relieved with properly designed biasing and gate capacitances. The PA is implemented in a 22nm FD-SOI technology with a chip core area of 0.21 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , Measurement results show that the PA achieves a power gain of 27dB and a PSAT of 21.7dBm with a maximum PAE of 27.1% at 28GHz. The output 1dB compression point (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1aB</sub> ) is 19.1 dBm. Measured PAE at P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> and 6dB power back-off are 23% and 10.3%, respectively.
Year
DOI
Venue
2020
10.1109/CICC48029.2020.9075906
2020 IEEE Custom Integrated Circuits Conference (CICC)
Keywords
DocType
ISSN
power amplifier,28GHz,millimeter wave,current combining,stacked-FET PA,FD-SOI
Conference
0886-5930
ISBN
Citations 
PageRank 
978-1-7281-6032-0
0
0.34
References 
Authors
2
7
Name
Order
Citations
PageRank
Zhiwei Zong142.43
Xinyan Tang200.34
Johan Nguyen312.05
Khaled Khalaf400.68
Giovanni Mangraviti5479.17
Yao Liu600.68
Piet Wambacq752996.10