Name
Abstract | ||
|---|---|---|
In this article we present RRAM single-cells based on MIS devices utilizing LPCVD silicon nitride thin layer as resistive switching material. The thin SiN layer was modified by plasma in order to improve the switching characteristics and the overall performance of the memory cell. Extensive material and electronic device characterization are presented. |
Year | DOI | Venue |
|---|---|---|
2019 | 10.1109/NANOARCH47378.2019.181308 | 2019 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) |
Keywords | DocType | ISSN |
nitride,resistance switching,resistive-switching memory (RRAM),impedance spectroscopy,Cu electrode | Conference | 2327-8218 |
ISBN | Citations | PageRank |
978-1-7281-5521-0 | 0 | 0.34 |
References | Authors | |
1 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| P. Karakolis | 1 | 0 | 0.34 |
| Normand, P. | 2 | 0 | 1.01 |
| Panagiotis Dimitrakis | 3 | 0 | 2.37 |
| L. Sygelou | 4 | 0 | 0.34 |
| Vasileios G. Ntinas | 5 | 0 | 0.34 |
| Iosif-Angelos Fyrigos | 6 | 0 | 3.38 |
| Ioannis Karafyllidis | 7 | 0 | 0.34 |
| G. Ch. Sirakoulis | 8 | 132 | 14.36 |