Title
An Ultra-Low Cost Multilayer Ram In Quantum-Dot Cellular Automata
Abstract
Quantum-dot cellular automata (QCA) is an alternative nanotechnology to traditional CMOS technology. In theory, circuits in QCA have the advantages of lower power consumption, higher integration density and switching frequency than circuits based on CMOS. Random access memory (RAM) circuits that are critical in designing large memory circuits have been explored. In this brief, a novel loop-based RAM cell with asynchronous set and reset, by using a new 2-1 multiplexer and D-latch, is proposed. Efficient 1 x 4 RAM and 4 x 4 RAM with three-layer structure are constructed. The proposed RAM cell has 35% improvement in both circuit footprint and cost, compared with an existing best scheme. The 1 x 4 RAM has less cells, delay and area than the previous designs with the same circuit scheme. The 4 x 4 RAM and m x n RAM show that the proposed RAM cell has excellent scalability for designing complex circuits. Functional correctness of the proposed designs has been proved by using QCADesigner 2.0.3.
Year
DOI
Venue
2020
10.1109/TCSII.2020.2988046
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
Keywords
DocType
Volume
Random access memory, Multiplexing, Logic gates, Clocks, Decoding, Simulation, Nonhomogeneous media, Quantum-dot cellular automata (QCA), random access memory (RAM), multiplexer, D-latch
Journal
67
Issue
ISSN
Citations 
12
1549-7747
1
PageRank 
References 
Authors
0.35
0
5
Name
Order
Citations
PageRank
Zhixin Song110.35
Guangjun Xie287.32
Xin Cheng310.35
Lei Wang410.69
Yongqiang Zhang5439.06