Title
Quadruple voltage mixed quenching and active resetting circuit in 150 nm CMOS for an external SPAD
Abstract
An integrated quadruple voltage mixed quenching, and active resetting circuit (Q <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> RC) in a 150 nm CMOS process is presented in this paper. The Q <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> RC features an excess-bias voltage of 7.2 V, which is four times the 1.8 V supply voltage. The dead time can be adjusted from 7 ns to 29 ns, which corresponds to the count rate range from 34 Mcps to 142 Mcps. Post-layout simulation results for an external SPAD with an equivalent parasitic capacitance of 4 pF are reported. The achieved quenching time of the Q <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> RC is 1.75 ns, which results in 4.05 GV/s quenching slew rate, while the delay time is 1.1 ns, and the resetting time is 2.55 ns.
Year
DOI
Venue
2020
10.1109/DDECS50862.2020.9095565
2020 23rd International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)
Keywords
DocType
ISSN
mixed quenching circuit,active resetting circuit,SPAD,photon counting,CMOS,dead-time controllability
Conference
2334-3133
ISBN
Citations 
PageRank 
978-1-7281-9939-9
0
0.34
References 
Authors
2
3
Name
Order
Citations
PageRank
Alija Dervic100.34
Bernhard Goll2156.08
Horst Zimmermann32915.60