Abstract | ||
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Three-dimensional (3D) NAND flash memory has high capacity and cell storage density by using the multi-bit technology and vertical stack architecture, but degrading data reliability due to high raw bit error rates (RBER) caused by program/erase (P/E) cycles and retention periods. Low-density parity-check (LDPC) codes become more popular error-correcting technologies to improve data reliability due to strong error correction capability, but introducing more decoding iterations at higher RBER. To reduce decoding iterations, this paper proposes BeLDPC: bit errors aware adaptive rate LDPC codes for 3D triple-level cell (TLC) NAND flash memory. Firstly, bit error characteristics in 3D charge trap TLC NAND flash memory are studied on a real FPGA testing platform, including asymmetric bit flipping and temporal locality of bit errors. Then, based on these characteristics, a high-efficiency LDPC code is designed. Experimental results show BeLDPC can reduce decoding iterations under different P/E cycles and retention periods. |
Year | DOI | Venue |
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2020 | 10.23919/DATE48585.2020.9116324 | 2020 Design, Automation & Test in Europe Conference & Exhibition (DATE) |
Keywords | DocType | ISSN |
asymmetric bit flipping,real FPGA testing platform,P-E cycles,program-erase cycles,vertical stack architecture,bit error aware adaptive rate LDPC codes,error-correcting technologies,high-efficiency LDPC code,temporal locality,asymmetric bit,3D charge trap TLC NAND flash memory,bit error characteristics,3D triple-level cell NAND flash memory,decoding iteration reduction,strong error correction capability,low-density parity-check codes,high raw bit error rates,data reliability,multibit technology,cell storage density,three-dimensional NAND flash memory,3D TLC NAND flash memory,BeLDPC,P | Conference | 1530-1591 |
ISBN | Citations | PageRank |
978-1-7281-4468-9 | 2 | 0.40 |
References | Authors | |
0 | 7 |
Name | Order | Citations | PageRank |
---|---|---|---|
Meng Zhang | 1 | 16 | 5.23 |
Fei Wu | 2 | 104 | 35.76 |
Qin Yu | 3 | 2 | 0.40 |
Weihua Liu | 4 | 2 | 1.07 |
Lanlan Cui | 5 | 2 | 0.40 |
Yahui Zhao | 6 | 2 | 0.73 |
Changsheng Xie | 7 | 366 | 66.54 |