Name
Abstract | ||
|---|---|---|
A method to measure sub-nanosecond reverse recovery in wafer-level test structures is presented. The setup uses a transmission line pulse generator with a time-domain through connection to measure the device-under-test current. The setup is used to measure reverse recovery in a 65-nm CMOS ESD diode, and it is found that a quasi-static compact model does not accurately describe the observed transient. A non-quasi-static charge control model is used to accurately simulate both the reverse recovery and the forward bias behavior. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/IRPS45951.2020.9129596 | 2020 IEEE International Reliability Physics Symposium (IRPS) |
Keywords | DocType | ISSN |
Diodes,electrostatic discharge,semiconductor device measurement,semiconductor device modeling,transmission line measurements | Conference | 1541-7026 |
ISBN | Citations | PageRank |
978-1-7281-3199-3 | 0 | 0.34 |
References | Authors | |
0 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Alex Ayling | 1 | 0 | 0.34 |
| Shudong Huang | 2 | 0 | 0.34 |
| Elyse Rosenbaum | 3 | 61 | 21.99 |