Title | ||
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Utilizing Valley-Spin Hall Effect in WSe 2 for Low Power Non-Volatile Flip-Flop Design |
Abstract | ||
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By virtue of the broken inversion symmetry and preserved time-reversal symmetry in monolayer WSe 2 , electrons from K and K’ valleys exhibit opposite spins [1] . Thus, when charge current ( I C ) flows, transverse spin currents ( I S ) are generated perpendicular to I C with up/down spins ( I S↑ /I S↓ ) flowing in opposite directions due to valley-spin hall effect (VSHE) [1] , [2] ( Fig. 1(a) ). The generated spins are out-of-plane and can be coupled with ferromagnets (FMs) with perpendicular magnetic anisotropy (PMA) to control their magnetizations [2] . Hence, magnetization switching energy can potentially be reduced compared to Giant Spin Hall Effect (GSHE) based switching of FMs with in-plane magnetic anisotropy (IMA) [3] . To effectively harness VSHE for circuit applications, careful device-circuit co-design is needed. |
Year | DOI | Venue |
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2020 | 10.1109/DRC50226.2020.9135153 | 2020 Device Research Conference (DRC) |
DocType | ISSN | ISBN |
Conference | 1548-3770 | 978-1-7281-7047-3 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
6 |
Name | Order | Citations | PageRank |
---|---|---|---|
Kyeongjae Cho | 1 | 2 | 1.94 |
S. K. Thirumala | 2 | 0 | 0.34 |
X. Liu | 3 | 276 | 50.30 |
N. Thakuria | 4 | 0 | 0.34 |
Zhao Chen | 5 | 76 | 25.75 |
Sumeet Kumar Gupta | 6 | 51 | 12.02 |