Title
Utilizing Valley-Spin Hall Effect in WSe 2 for Low Power Non-Volatile Flip-Flop Design
Abstract
By virtue of the broken inversion symmetry and preserved time-reversal symmetry in monolayer WSe 2 , electrons from K and K’ valleys exhibit opposite spins [1] . Thus, when charge current ( I C ) flows, transverse spin currents ( I S ) are generated perpendicular to I C with up/down spins ( I S↑ /I S↓ ) flowing in opposite directions due to valley-spin hall effect (VSHE) [1] , [2] ( Fig. 1(a) ). The generated spins are out-of-plane and can be coupled with ferromagnets (FMs) with perpendicular magnetic anisotropy (PMA) to control their magnetizations [2] . Hence, magnetization switching energy can potentially be reduced compared to Giant Spin Hall Effect (GSHE) based switching of FMs with in-plane magnetic anisotropy (IMA) [3] . To effectively harness VSHE for circuit applications, careful device-circuit co-design is needed.
Year
DOI
Venue
2020
10.1109/DRC50226.2020.9135153
2020 Device Research Conference (DRC)
DocType
ISSN
ISBN
Conference
1548-3770
978-1-7281-7047-3
Citations 
PageRank 
References 
0
0.34
0
Authors
6
Name
Order
Citations
PageRank
Kyeongjae Cho121.94
S. K. Thirumala200.34
X. Liu327650.30
N. Thakuria400.34
Zhao Chen57625.75
Sumeet Kumar Gupta65112.02