Paper Info
Title
Bounds and Code Constructions for Partially Defect Memory Cells
Abstract
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for masking such partially stuck cells while additionally correcting errors. This construction (for cells with q > 2 levels) is achieved by generalizing an existing masking-only construction in [1] (based on binary codes) to correct errors as well. Compared to previous constructions in [2], our new construction achieves larger rates for many sets of parameters. Second, we derive a sphere-packing (any number of u partially stuck cells) and a Gilbert-Varshamov bound (u <; q partially stuck cells) for codes that can mask a certain number of partially stuck cells and correct errors additionally. A numerical comparison between the new bounds and our previous construction of PSMCs for the case u <; q in [2] shows that our construction lies above the Gilbert-Varshamov-like bound for several code parameters.
Year
DOI
Venue
2020
10.1109/ACCT51235.2020.9383410
2020 Algebraic and Combinatorial Coding Theory (ACCT)
Keywords
DocType
ISBN
flash memories,phase change memories,defect memory,(partially) stuck cells,defective cells error correction,sphere packing bound,Gilbert-Varshamov bound
Conference
978-1-6654-0288-0
Citations 
PageRank 
References 
0
0.34
0
Authors
3
Name
Order
Citations
PageRank
Haider Al Kim100.34
Sven Puchinger22514.73
Antonia Wachter-Zeh312933.65