Abstract | ||
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Gallium nitride (GaN) devices are advantageous over conventional Silicon (Si) devices in terms of their small size, low on-resistance, and high dv/dt characteristics; these ensure a high integrated density circuit configuration, high efficiency, and fast switching speed. Therefore, in the diagnosis and protection of a system containing a GaN power semiconductor, the transient state for accurate switch current measurement must be analyzed. The pick-up coil, as a current sensor for switch current measurement in a system comprising a surface-mount-device-type nonmodular GaN power semiconductor, has the advantages of a higher degree-of-freedom configuration for its printed circuit board, a relatively small size, and lower cost than other current sensors. However, owing to the fast switching characteristics of the GaN device, a bandwidth of hundreds MHz must be secured along with a coil configuration that must overcome the limitations of relatively low sensitivity of the conventional current sensor. This paper analyzes the pick-up coil sensor models that can achieve optimal bandwidth and sensitivity for switch current measurement in GaN based device. So four configurable pick-up coil models are considered and compared according to coil-parameter using mathematical methods, magnetic, and frequency-response analysis. Finally, an optimal coil model is proposed and validated using a double-pulse test. |
Year | DOI | Venue |
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2020 | 10.3390/s20216066 | SENSORS |
Keywords | DocType | Volume |
GaN,Rogowski coil,pick-up coil,double pulse test,switch current | Journal | 20 |
Issue | ISSN | Citations |
21 | 1424-8220 | 0 |
PageRank | References | Authors |
0.34 | 0 | 2 |
Name | Order | Citations | PageRank |
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Ui-Jin Kim | 1 | 0 | 0.34 |
Rae-Young Kim | 2 | 0 | 1.01 |