Name
Abstract | ||
|---|---|---|
AbstractSince static random access memory (SRAM)-based field-programmable gate array (FPGA) has limited density and comparatively high leakage power, researchers have proposed FPGA architectures based on emerging nonvolatile memories (NVMs) to satisfy the requirements of data-intensive and low-power applications. Among all components, block random access memory (BRAM) has the severest endurance problem in FPGA. Unluckily, traditional wear leveling (TWL) strategies cannot be directly applied to nonvolatile FPGA because it may induce large performance overhead. In this article, we propose performance-aware wear leveling schemes for nonvolatile FPGA to improve its lifetime. Two strategies pertaining to coarse-grained wear leveling (C-Pearl) and fine-grained wear leveling (F-Pearl) are developed to balance inter-BRAM and intra-BRAM writes. Procedures, including static analysis, wear leveling-guided placement, and reconfiguration are discussed. A supportive circuit design is proposed, too. The evaluation shows that C-Pearl and F-Pearl can achieve 34% and 46% higher lifetime improvement and simultaneously 8% and 11% lower performance overhead than TWL. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TCAD.2020.2998779 | Periodicals |
Keywords | DocType | Volume |
Field programmable gate arrays, Nonvolatile memory, Random access memory, Routing, Decoding, Phase change materials, Tools, Field-programmable gate array (FPGA), nonvolatile memory (NVM), placement, wear leveling | Journal | 40 |
Issue | ISSN | Citations |
2 | 0278-0070 | 1 |
PageRank | References | Authors |
0.35 | 0 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hao Zhang | 1 | 1 | 0.69 |
| Ke Liu | 2 | 20 | 16.97 |
| mengying zhao | 3 | 104 | 14.44 |
| Zhaoyan Shen | 4 | 14 | 7.94 |
| Xiaojun Cai | 5 | 6 | 4.17 |
| zhiping jia | 6 | 463 | 60.64 |