Title
Development Of A 64 Gbps Si Photonic Crystal Modulator
Abstract
A compact silicon photonic crystal waveguide (PCW) slow-light modulator is presented. The proposed modulator is capable of achieving a 64 Gbps bit-rate in a wide operating spectrum. The slow-light enhances the modulation efficiency in proportion to its group index n(g). Two types of 200-mu m-long PCW modulators are presented. These are low-and high-dispersion devices, which are implemented using a complementary metal-oxide-insulator process. The lattice-shifted PCW achieved low- dispersion slow-light and exhibited n(g) approximate to 20 with an operating spectrum Delta lambda approximate to 20 nm, in which the fluctuation of the extinction ratio is +/- 0.5 dB. The PCW device without the lattice shift exhibited high-dispersion, for which a large or small value of n(g) can be set on demand by changing the wavelength. It was found that for a large n(g), the frequency response was degraded due to the electro-optic phase mismatch between the RF signals and slow-light even for such small-size modulators. Meander-line electrodes, which bypass and delay the RF signals to compensate for the phase mismatch, are proposed. A high cutoff frequency of 55 GHz was theoretically predicted, whereas the experimentally measured value was 38 GHz. A high-quality open eye pattern for a drive voltage of 1 V at 32 Gbps was observed. The clear eye pattern was maintained for 50-64 Gbps, although the drive voltage increased to 3.5-5.3 V. A preliminary operation of a 2-bits pulse amplitude modulation up to 100 Gbps was also attempted.
Year
DOI
Venue
2020
10.1587/transele.2019OCP0004
IEICE TRANSACTIONS ON ELECTRONICS
Keywords
DocType
Volume
photonic crystal, optical modulator, silicon photonics
Journal
E103C
Issue
ISSN
Citations 
11
1745-1353
0
PageRank 
References 
Authors
0.34
0
3
Name
Order
Citations
PageRank
Yosuke Hinakura101.01
Hiroyuki Arai24110.53
Toshihiko Baba314.68