Name
Title | ||
|---|---|---|
A Domino Bootstrapping 12V GaN Driver for Driving an On-Chip 650V eGaN Power Switch for 96% High Efficiency |
Abstract | ||
|---|---|---|
The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/VLSICircuits18222.2020.9162979 | 2020 IEEE Symposium on VLSI Circuits |
Keywords | DocType | ISSN |
domino bootstrapping technique,self-biasing loop,derivative-time controller,dual current supply technique,HEMT switch,domino bootstrapping gallium nitride driver,on-chip power switch,on-chip enhancement mode gallium nitride,monolithically integrated gallium nitride driver,derivative-voltage,DCS technique,slew rate,quiescent current reduction,voltage 12.0 V,voltage 650.0 V,current 120.0 muA,efficiency 96 percent,GaN | Conference | 2158-5601 |
ISBN | Citations | PageRank |
978-1-7281-9943-6 | 0 | 0.34 |
References | Authors | |
0 | 10 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Hsuan-Yu Chen | 1 | 21 | 4.63 |
| Wei-Tin Lin | 2 | 0 | 0.34 |
| Cheng-Hsiang Liao | 3 | 0 | 1.01 |
| Zong-Yi Lin | 4 | 2 | 0.72 |
| Zhi-Qiang Zhang | 5 | 0 | 1.01 |
| Yu-Yung Kao | 6 | 0 | 1.69 |
| Ke-Horng Chen | 7 | 379 | 90.04 |
| Ying-Hsi Lin | 8 | 112 | 30.84 |
| Shian-Ru Lin | 9 | 13 | 8.38 |
| Tsung-Yen Tsai | 10 | 37 | 20.41 |