Title
An Advanced 4-inch IETO with Ultra-Low Commutation Impedance to Achieve 8 kA Turn-off Capability: Comprehensive Analysis, Design and Experiments
Abstract
Compared with integrated gate commutated thyristors (GCTs), an integrated emitter turn-off thyristor (IETO) has a potential of higher turn-off current capability and requires lower power consumption for gate driver units, which is more suitable for high-power applications. Thus, in this article, an advanced design of 4-in IETO was presented. To reduce the gate commutation impedance and enhance the...
Year
DOI
Venue
2021
10.1109/TIE.2020.3021645
IEEE Transactions on Industrial Electronics
Keywords
DocType
Volume
Logic gates,MOSFET,Thyristors,Inductance,Cathodes,Resistance,Gate drivers
Journal
68
Issue
ISSN
Citations 
10
0278-0046
0
PageRank 
References 
Authors
0.34
0
7
Name
Order
Citations
PageRank
Zhengyu Chen1118.41
Zhanqing Yu275.08
Biao Zhao37714.49
Jiapeng Liu400.34
Jie Shang500.34
Rik De Doncker600.34
Rong Zeng72510.40