Name
Title | ||
|---|---|---|
A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE |
Abstract | ||
|---|---|---|
In this brief, A two-stage power amplifier (PA) with a four-way series-parallel power combiner is presented for Ka-band applications. A compact power stage with optimized cascode transistors is proposed to minimize the parasitic effects and boost the amplifier output power at the mm-wave frequencies. The output network employs two spiral transformers and a transmission-line combiner to realize low-loss power matching and broadband series-parallel combining. The PA is fabricated in a 130-nm SiGe BiCMOS technology and it occupies a core area of 0.48 mm
<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>
. The PA achieves a peak gain of 25.3 dB with the 3-dB bandwidth of 30-to-41 GHz. At the frequency of 35 GHz, the measured saturated output power (P
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SAT</sub>
), 1-dB compressed power (OP
<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub>
), and power-added efficiency (PAE) are 22.8 dBm, 22.6 dBm, and 27%, respectively. |
Year | DOI | Venue |
|---|---|---|
2021 | 10.1109/TCSII.2020.3035936 | IEEE Transactions on Circuits and Systems II: Express Briefs |
Keywords | DocType | Volume |
Power amplifier (PA),SiGe,BiCMOS,broadband amplifier,millimeter-wave (mm-wave),power combining,transformer | Journal | 68 |
Issue | ISSN | Citations |
4 | 1549-7747 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chuanchuan Wan | 1 | 0 | 0.34 |
| Hao Zhang | 2 | 207 | 58.59 |
| Ling Li | 3 | 0 | 0.34 |
| Keping Wang | 4 | 18 | 3.77 |