Paper Info
Title
A 22-to-47 GHz 2-Stage LNA With 22.2 dB Peak Gain by Using Coupled L-Type Interstage Matching Inductors
Abstract
This article presents a 22-47 GHz wideband low-noise amplifier (LNA) with coupled L-type interstage matching inductors. The coupled inductors extend the bandwidth of LNA by moving zeros to lower frequencies to cancel the effect of poles. Meanwhile, asymmetric L-type inductors with different inductances can be designed separately to achieve better gain flatness. In addition, the quality factor of coupled inductors is also slightly improved without significantly changing their inductance. The LNA is fabricated in a 0.13-μm SiGe BiCMOS technology, and it occupies a core area of 0.13 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The LNA achieves a peak gain of 22.2 dB with the 3dB bandwidth of 22-47 GHz (fractional bandwidth up to 72.5%). The measured NF varies between 3.0 and 4.3 dB from 22 to 47 GHz. The measured input 1-dB gain compression point is stable from -23.9 to -22.6 dBm in the entire 3-dB gain bandwidth. The chip consumes a total power of 9.5 mW from a 1.2 V supply.
Year
DOI
Venue
2020
10.1109/TCSI.2020.3019335
IEEE Transactions on Circuits and Systems I: Regular Papers
Keywords
DocType
Volume
Low-noise amplifier,LNA,SiGe,BiCMOS,broadband amplifier,millimeter-wave (mm-wave) integrated circuits,bandwidth extension,coupled L-type,noise figure (NF)
Journal
67
Issue
ISSN
Citations 
12
1549-8328
1
PageRank 
References 
Authors
0.36
0
2
Name
Order
Citations
PageRank
Keping Wang184.42
Hao Zhang220758.59