Name
Abstract | ||
|---|---|---|
A variable gate resistance SiC MOSFET drive circuit is proposed. The switching speed of SiC MOSFET is improved by switching different drive resistors at different stages of the SiC MOSFET switching process. In the early stage of the device switch, two driving resistors are used to charge and discharge the gate electrode together to reduce the delay of the device switch and increase the rising rate of voltage and current. Then the small drive resistance is cut out and the large drive resistance is used to suppress the voltage and current spikes and oscillations in the switching process of SiC MOSFET. The SiC MOSFET driving circuit test platform was built to verify the effectiveness of the proposed driving circuit. The experimental results show that the rising rate of drain current Id in the switching process of SiC MOSFET driven by variable grid resistance SiC MOSFET is increased by 118%, the rising rate of drain-source voltage Vds in the switching process is increased by 117%, and the total loss in the switching process is reduced by 15.34%. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.1109/IECON43393.2020.9254632 | IECON 2020: THE 46TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY |
Keywords | DocType | ISSN |
SiC MOSFET, variable gate resistance, drive circuit, switching speed, switching loss | Conference | 1553-572X |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yongxiao Teng | 1 | 0 | 0.34 |
| Qiang Gao | 2 | 254 | 51.34 |
| Qian Zhang | 3 | 0 | 0.34 |
| Jiabao Kou | 4 | 0 | 0.68 |
| DianGuo Xu | 5 | 22 | 30.76 |