Name
Abstract | ||
|---|---|---|
Since we have previously shown that the deposition of pure Boron (PureB) on Silicon (Si) forms an almost ideal pn-junction, the next step is to utilize this technology towards a high-speed pnp bipolar junction transistor (BJT) made from Si. Here, the Emitter is made from a PureB. The PureB layer is extremely thin and features an almost defect-free pn-junction, a low off-current and a low series resistance, which makes it feasible to achieve better characteristics than the conventional BJT. However, PureB is very unreactive and therefore hard to etch, which results in a high roughness of the underlying semiconductor after etching. That is why it is challenging to build a three-terminal device such as a BJT. In this work, we present a novel process scheme using a double-layer hardmask of Silicon dioxide (SiO
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) and Aluminum oxide (Al
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O
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) to enable differential epitaxy of PureB. Onto the substrate a layer stack of SiO
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and Al
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O
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was deposited and structured, the Al
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O
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was then recrystallized to be used as an etch stop. PureB was deposited subsequently by differ-rential epitaxy into the SiO
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windows. |
Year | DOI | Venue |
|---|---|---|
2020 | 10.23919/MIPRO48935.2020.9245196 | 2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO) |
Keywords | DocType | ISBN |
PureB,bipolar junction transistor,molecular beam epitaxy,physical vapor deposition | Conference | 978-1-7281-5339-1 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Causevic | 1 | 0 | 0.34 |
| H. S. Funk | 2 | 1 | 1.30 |
| D. Schwarz | 3 | 1 | 1.64 |
| K. Guguieva | 4 | 0 | 0.34 |
| J. Schulze | 5 | 2 | 4.97 |