Name
Title | ||
|---|---|---|
Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio |
Abstract | ||
|---|---|---|
Mos
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is a two-dimensional (2D) semi-conductor which is now considered as a channel material in 2D FETs [1]-[3]. Recently we found that single-layer (1L) Mos
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FETs grown by chemical vapour deposition (CVD) and encapsulated with high-quality Al
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O
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layer exhibit superior performance and reliability compared to all previously reported 2D FETs [2]. However, while the
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/
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ratio (~10
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) of the devices [2] already fulfills commercial standards, their reliability is still poorer than for Si devices [4]. In order to understand the physical origin of these aspects, here we analyze the impact of annealing at 300°C and Al
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O
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deposition on the performance and hysteresis dynamics of 1L MoS
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FETs. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442242 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISBN |
hysteresis dynamics,chemical vapour deposition,single-layer semiconductor device,on-off current ratio,encapsulation,annealing,CVD-MoS2 FETs,two-dimensional semiconductor,temperature 300.0 degC,MoS2 | Conference | 978-1-5386-3029-7 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
7 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yury Yu. Illarionov | 1 | 0 | 0.68 |
| Kirby K. H. Smithe | 2 | 0 | 0.34 |
| m waltl | 3 | 2 | 3.25 |
| Ryan W. Grady | 4 | 0 | 0.34 |
| Sanchit Deshmukh | 5 | 0 | 0.34 |
| Eric Pop | 6 | 50 | 12.07 |
| T. Grasser | 7 | 21 | 10.90 |