Name
Title | ||
|---|---|---|
Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown Voltage |
Abstract | ||
|---|---|---|
The gallium nitride (GaN) material system has become one of the most promising material systems for high efficiency power switching applications due to its unique material properties, including a wide band gap, high critical electric field, and large mobility and saturation electron velocity. For high voltage, high current applications, vertical device structures on bulk GaN substrates are especially promising [1]. Although the ability to scale the devices to large absolute currents is critical for power electronics, to date the current-carrying capability of many demonstrated devices has fallen short of theoretical expectations due to non-idealities in device area scaling. High performance vertical GaN-on-GaN p-n diodes using N ion-implantation edge termination incorporating a partially-compensated layer were demonstrated to achieve breakdown voltages of 1.2 kV, and both the reverse and forward current densities were found to scale well with area [2]. In this work, a device structure designed for higher breakdown operation was explored, and devices with a range of areas were fabricated and tested under high-current drive conditions. Peak forward currents approaching 10 A at a forward voltage of 5.3 V were obtained for typical 550 μm diameter GaN-on-GaN p-n diodes having a breakdown voltage of 1.6 kV. |
Year | DOI | Venue |
|---|---|---|
2018 | 10.1109/DRC.2018.8442215 | 2018 76th Device Research Conference (DRC) |
Keywords | DocType | ISSN |
power electronics,forward current densities,p-n diodes,breakdown voltage,material system,material properties,electric field,electron velocity,high efficiency power switching,ion-implantation edge termination,voltage 1.2 kV,current 10.0 A,voltage 5.3 V,voltage 1.6 kV,size 550.0 mum,GaN | Conference | 1548-3770 |
ISBN | Citations | PageRank |
978-1-5386-3029-7 | 0 | 0.34 |
References | Authors | |
0 | 8 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| jianping wang | 1 | 40 | 5.87 |
| L. Cao | 2 | 0 | 0.34 |
| J. Xie | 3 | 0 | 0.34 |
| Edward Beam | 4 | 10 | 3.27 |
| C. Youtsey | 5 | 0 | 0.34 |
| R. McfCarthy | 6 | 0 | 0.34 |
| L. Guido | 7 | 0 | 0.34 |
| Patrick Fay | 8 | 7 | 3.54 |