Paper Info
Title
Design Solutions for 5G Power Amplifiers using 0.15μm and 0.25μm GaN HEMTs
Abstract
This paper presents Power Amplifier solutions for 5G using GaN SiC HEMT technology. The difference in performance between 0.15 μm and 0.25 μm GaN HEMT devices is discussed. Measurements show 0.25 μm GaN HEMTs provide good performance for applications up to 18 GHz, including excellent performance in the Sub-6 GHz 5G bands. 0.15 μm GaN HEMTs currently offer good performance for applications to more than 32 GHz, including excellent performance in the 24-28 GHz 5G mm-wave band. Variations on the 0.15 μm process are also being developed to extend the operation frequency to cover the US 5G mm-wave band at 39 GHz and operation over 40 GHz to include Q band Satellite. This paper discusses performance of a discrete GaN power transistor (power bar) DC - 14GHz, with high power density and PAE in a single stage transistor that offers strong performance suitable for Sub-6 GHz 5G. It also discusses performance of a 2-stage 5W PA MMIC 24-28 GHz which is ideally suited for mm-wave 5G.
Year
DOI
Venue
2020
10.1109/VLSI-DAT49148.2020.9196306
2020 International Symposium on VLSI Design, Automation and Test (VLSI-DAT)
Keywords
DocType
ISSN
5G power amplifiers,HEMT technology,HEMT devices,mm-wave band,discrete power transistor,mm-wave 5G,2-stage PA MMIC,size 0.25 mum,frequency 18.0 GHz,frequency 6.0 GHz,size 0.15 mum,frequency 39.0 GHz,frequency 24.0 GHz to 28.0 GHz,frequency 0 GHz to 14 GHz,SiC,GaN
Conference
2380-7369
ISBN
Citations 
PageRank 
978-1-7281-6084-9
0
0.34
References 
Authors
1
2
Name
Order
Citations
PageRank
Yi-Qi Lin100.34
Andrew Patterson254.52