Abstract | ||
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This paper presents a detailed analysis of an effective method to improve the linearity and, consequently, the temperature insensitivity of the output characteristic of current processing based bandgap references. The described technique is shown to be successful on a circuit which generates a temperature-invariant current of approximately 1 μA which has been designed and extensively simulated in a standard 130-nm CMOS process in the -40°C to 125°C temperature range. The circuit nominal supply voltage is 1.5 V and it has a total power consumption of about 5 μW. The analyzed linearity boosting technique, applied to the proposed circuit, provides a temperature sensitivity of the output current as low as 1.7 ppm/°C in the considered range, making it suitable for a lot of different precision applications that require a highly stable current signal with respect to temperature. |
Year | DOI | Venue |
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2020 | 10.1109/ICECS49266.2020.9294909 | 2020 27th IEEE International Conference on Electronics, Circuits and Systems (ICECS) |
Keywords | DocType | ISBN |
temperature insensitivity,output characteristic,CMOS process,circuit nominal supply voltage,total power consumption,temperature sensitivity,output current,linearity boosting technique analysis,modified current-mode bandgap reference,temperature-invariant current,stable current signal,current processing based bandgap references,voltage 1.5 V,power 5.0 muW,temperature -40.0 degC to 125.0 degC,size 130 nm | Conference | 978-1-7281-6045-0 |
Citations | PageRank | References |
0 | 0.34 | 2 |
Authors | ||
4 |
Name | Order | Citations | PageRank |
---|---|---|---|
Antonio Aprile | 1 | 0 | 0.34 |
Daniele Gardino | 2 | 0 | 0.34 |
Piero Malcovati | 3 | 186 | 50.22 |
Edoardo Bonizzoni | 4 | 162 | 47.30 |