Name
Abstract | ||
|---|---|---|
A compact trench-gate IGBT model that captures MOS-side carrier injection is developed. The model retains the simplicity of a one-dimensional solution to the ambipolar diffusion equation, but at the same time captures MOS-side carrier injection and its effects on steady-state carrier distribution in the drift region and on switching waveforms. |
Year | DOI | Venue |
|---|---|---|
2007 | 10.1109/07IAS.2007.44 | 2007 IEEE Industry Applications Annual Meeting |
Keywords | DocType | ISSN |
MOS-side carrier injection,trench-gate IGBT model,ambipolar diffusion equation,steady-state carrier distribution,switching waveforms | Conference | 0197-2618 |
ISBN | Citations | PageRank |
978-1-4244-1259-4 | 0 | 0.34 |
References | Authors | |
0 | 6 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| L. Lu | 1 | 0 | 0.34 |
| Z. Chen | 2 | 0 | 0.34 |
| Angus T. Bryant | 3 | 0 | 0.34 |
| E. Santi | 4 | 29 | 5.39 |
| Jerry L. Hudgins | 5 | 0 | 0.34 |
| Patrick R. Palmer | 6 | 0 | 0.34 |