Paper Info
Title
Lumped Element High Precision X-Band Bandpass Filter with Through Silicon Via (TSV) Integrated Passive Device (IPD) Technology
Abstract
A lumped element planar X-band bandpass filter (BPF) design fabricated with a Through Silicon Via (TSV) Integrated Passive Device (IPD) process is presented in this paper. The proposed design provides > 34dB low band attenuation by 6.7GHz with <; 1.9 dB passband insertion loss. High band attenuation of > 23dB is also realized from 15.5 GHz to 24 GHz. This design achieves low cost with compact size, owing to mature 8 inch Silicon manufacturing. TSV technology enables demonstration of die level model correlation of silicon IPD design at X-band with reduced test fixture influence. Model correlation is verified through on wafer measurement.
Year
DOI
Venue
2021
10.1109/RWS50353.2021.9360374
2021 IEEE Radio and Wireless Symposium (RWS)
Keywords
DocType
ISSN
IPD,TSV,filter,BPF,X band,5G,UWB,Radar
Conference
2164-2958
ISBN
Citations 
PageRank 
978-1-7281-8063-2
1
0.41
References 
Authors
0
2
Name
Order
Citations
PageRank
Ki R. Shin110.41
Kim Eilert210.41