Paper Info
Title
Interface Engineering Of Ferroelectric-Gated Mos2 Phototransistor
Abstract
Two-dimensional (2D) layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection. However, most 2D materials are very sensitive to the environment. Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials. Here, we focus on a molybdenum disulfide (MoS2) phototransistor gated by ferroelectrics, and insert a hexagonal boron nitride (h-BN) layer between MoS2 and the ferroelectric film to improve the interface. To clarify the role of h-BN in this device, two parallel devices are prepared on the same MoS2 flake. One device is covered with h-BN, while the other is in direct contact with the ferroelectric film. The electronic and optoelectronic properties of these two devices are then measured and compared. Experimental results reveal that, compared to device without h-BN, the MoS2 phototransistor with h-BN exhibits higher carrier mobility (average value: 85 cm(2).V-1.s(-1) and highest value: 185 cm(2).V-1.s(-1)), larger responsivity (85 A.W-1), and larger detectivity (1.76 x 10(13) Jones). Thus, this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials.
Year
DOI
Venue
2021
10.1007/s11432-020-3180-5
SCIENCE CHINA-INFORMATION SCIENCES
Keywords
DocType
Volume
2D materials, ferroelectrics, MoS2 phototransistors, h-BN, interface engineering
Journal
64
Issue
ISSN
Citations 
4
1674-733X
0
PageRank 
References 
Authors
0.34
0
13
Name
Order
Citations
PageRank
Shuaiqin WU100.34
Xudong Wang200.68
Wei JIANG300.34
Luqi TU400.34
Yan CHEN500.34
Jingjing LIU600.34
Tie LIN700.34
Hong SHEN800.34
Jun Ge94514.00
Weida Hu1011.16
Xiangjian Meng1100.68
Jianlu WANG1200.34
Jun-Hao Chu1322.69